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PD - 9.1095B
IRF7103
HEXFET(R) Power MOSFET
l l l l l l l
Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
S1 G1 S2 G2
1
8
D1 D1 D2 D2
2
7
VDSS = 50V RDS(on) = 0.130 ID = 3.0A
3
6
4
5
Top View
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
S O -8
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TC = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
3.0 2.3 10 2.0 0.016 20 4.5 -55 to + 150
Units
A W W/C V V/nS C
Thermal Resistance Ratings
Parameter
RJA Maximum Junction-to-Ambient
Min.
---
Typ.
---
Max.
62.5
Units
C/W 8/25/97
IRF7103
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) VGS(th) gfs IDSS IGSS Qg Q gs Q gd t d(on) tr t d(off) tf LD LS Ciss Coss Crss
Min. 50 --- --- --- 1.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.049 0.11 0.16 --- 3.8 --- --- --- --- 12 1.2 3.5 9.0 8.0 45 25 4.0 6.0 290 140 37
Max. Units Conditions --- V V GS = 0V, I D = 250A --- V/C Reference to 25C, I D = 1mA 0.13 VGS = 10V, I D = 3.0A 0.20 VGS = 4.5V, ID = 1.5A 3.0 V VDS = VGS , ID = 250A --- S V DS = 15V, ID = 3.0A 2.0 VDS = 40V, VGS = 0V A 25 VDS = 40V, VGS = 0V, TJ = 55 C 100 VGS = 20V nA -100 VGS = - 20V 30 I D = 2.0A --- nC VDS = 25V --- VGS = 10V 20 VDD = 25V 20 I D = 1.0A ns 70 R G = 6.0 50 RD = 25
D
--- nH --- --- --- ---
pF
Between lead,6mm(0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz
G
S
Source-Drain Ratings and Characteristics
IS
ISM
V SD t rr Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 2.0 showing the A G integral reverse --- --- 12 p-n junction diode. S --- --- 1.2 V TJ = 25C, IS = 1.5A, VGS = 0V --- 70 100 ns TJ = 25C, IF = 1.5A --- 110 170 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 300s; duty cycle 2%.
ISD 1.8A, di/dt 90A/s, VDD V(BR)DSS ,
TJ 150C
Surface mounted on FR-4 board, t 10sec.
IRF7103
IRF7103
C,
IRF7103
VDS VGS RG RD
D.U.T.
+
- VDD
10V
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
(Z thJA )
D = 0.50 0.20 10 0.10
Thermal Response
0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 PDM
0.1 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7103
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
10V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 12a. Basic Gate Charge Waveform
Fig 12b. Gate Charge Test Circuit
IRF7103
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS
IRF7103
Package Outline
SO8 Outline
INCHES
D -B-
MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99
DIM
5
MIN .0532 .0040 .014 .0075 .189 .150
MAX .0688 .0098 .018 .0098 .196 .157
A
6 5 H 0.25 (.010) M AM
5
8 E -A-
7
A1 B C D E
1
2
3
4
e 6X
K x 45 e1 A
e e1 H K L
.050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8
1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8
0.10 (.004) 6
-CB 8X 0.25 (.010) A1 M CASBS
L 8X
C 8X
RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS 6 MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X
6.46 ( .255 )
1.78 (.070) 8X
Part Marking Information
SO8
E X A M P LE : TH IS IS A N IR F 7 101 D A T E C O D E (Y W W ) Y = LA S T D IG IT O F T H E YE A R W W = W EEK XX X X W AFER LO T C O D E (LA S T 4 D IG IT S )
3 12 IN T E R N A TI ON A L R E C T IF IE R LO G O F 7 101
T OP
PART NUMBER
B O T TO M
IRF7103
Tape & Reel Information
SO8 Dimensions are shown in millimeters (inches)
T ER M IN A L N U M B E R 1
12 .3 ( .48 4 ) 11 .7 ( .46 1 )
8 .1 ( .3 18 ) 7 .9 ( .3 12 )
F E ED D IR E C T IO N
N O TE S: 1 . CO N TRO LL IN G D IM E N SIO N : M ILLIM E TE R. 2 . A LL DIM E NS IO NS A R E S HO W N IN M ILL IM E TER S (INC HE S ). 3 . O UTL IN E C O NFO RM S TO E IA - 48 1 & E IA -5 41 .
33 0. 00 (12 .99 2) M A X.
1 4. 40 ( .5 66 ) 1 2. 40 ( .4 88 ) N O T ES : 1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER . 2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97

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